CHM65A3PAPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTIC ( CHM65A3PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF Gate-Body Leakage
IGSSR Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 25 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
25
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
V_DS = V_GS, I_D = 250 µA
VGS=10V, ID=38A
VGS=4.5V, ID=24A
1
3
V
10 13
mΩ
15 20
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 15V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=15V, ID=38A
VGS=10V
V_DD= 15V
ID =38A, VGS= 4.5 V
RGEN= 16 Ω
935
220
pF
110
16 25
3.0
nC
3.0
25 50
8
16
nS
55 110
20 40
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 38A, VGS= 0 V
38
A
1.3 V