CHM6426PAPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTIC ( CHM6426PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 60 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
60
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance}
VGS=10V, ID=8A
VGS=4.5V, ID=6.4A
1
3
V
45 66
mΩ
65 85
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
VDS=30V, ID=4.5A
VGS=10V
V_DD= 30V
ID = 1.0A, VGS= 10 V
RGEN= 6 Ω
680
80
pF
45
12.9 17.1
1.6
nC
2.5
10 20
2.9 5.8 _nS
29.7 59.4
2.5 5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 8A, VGS= 0 V (Note 2)
16
A
1.2 V