CHM62A2PAPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM62A2PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 20 V, V_GS = 0 V
V_GS = 12V,V_DS = 0 V
V_GS = -12V, V_DS = 0 V
20
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=4.5V, ID=18A
VGS=2.5V, ID=9A
V_DS =5V, I_D = 18A
0.5
1.2
V
10 12
mΩ
13 17
10
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=20V, ID=18A
VGS=5V
V_DD= 10V
ID = 18A, VGS= 5 V
RGEN= 3.3 Ω
35 45
4
nC
12
17 35
12 25
nS
55 110
30 60
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 45A, VGS= 0 V
45
A
1.3 V