CHM6030LPAPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM6030LPAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 24 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
30
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=10V, ID=20A
VGS=4.5V, ID=18A
V_DS =10V, I_D = 26A
1 1.6 3
V
12 15.5
mΩ
18.5 22
32
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=48V, ID=15A
VGS=10V
V_DD= 30V
ID =15A, VGS= 10 V
RGEN= 25 Ω
19 23
5
nC
9
10 16
190 250
nS
55 90
130 200
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 26A, VGS= 0 V
40
A
0.9 1.3 V