CHM540ANPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTIC ( CHM540ANPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 100 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
100
V
25 µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A}
g _FS
Forward Transconductance
V_DS =25V, I_D = 18A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
2
4
V
40 48 mΩ
14
S
832
240
pF
105
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=80V, ID=18A
VGS=10V
V_DD= 50V
ID = 18A, VGS= 10 V
RGEN= 5.1 Ω
37.5 48
6
nC
18
13 40
11 35
nS
32 65
15 45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 18A, VGS= 0 V (Note 2)
36
A
1.3 V