CHM51A3PAPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM51A3PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 30 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
30
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=10V, ID=17.5A
VGS=4.5V, ID=17.5A
V_DS =15V, I_D = 17.5A
1
3
V
14 18
mΩ
21 28
16
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=24V, ID=35A
VGS=5V
V_DD= 15V
ID = 17.5A, VGS= 4.5 V
RGEN= 4.7 Ω
14 17
3.7
nC
5
20 50
7
21
nS
30 60
8
24
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 35A, VGS= 0 V
35
A
1.3 V