CHM50N06NPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM50N06NPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 54 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
60
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance VGS=10V, ID=50A}
g _FS
Forward Transconductance
V_DS =10V, I_D = 25A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
2
4
V
14 22 mΩ
19
S
1420
400
pF
50
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=48V, ID=48A
VGS=10V
V_DD= 30V
ID = 48A, VGS= 10 V
RGEN= 7.5 Ω
28.2 37.5
8.5
nC
7
17.2 34.4
5
10
nS
32.5 65
10 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 50A, VGS= 0 V (Note 2)
50
A
1.5 V