CHM4948JPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – Dual P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM4948JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -60 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
-60
V
-2
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-10V, ID=-3.1A
VGS=-4.5V, ID=-2.8A
V_DS = -15V, I_D = -3.1A
-1
-3
V
90 120
mΩ
120 150
7
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-30V, ID=-3.1A
VGS=-10V
V_DD= -30V
ID = -1.0A, VGS= -10 V
RGEN= 6 Ω
21 29
3
nC
4
13 45
9
30
nS
48 150
22 75
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -2.0A, VGS= 0 V (Note 2)
-2.0 A
-1.2 V