CHM4946JPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – Dual N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC ( CHM4946JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 60 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
60
V
2
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=10V, ID=4.5A
VGS=4.5V, ID=3.9A
V_DS =10V, I_D = 4.5A
1
3
V
45 55
mΩ
55 75
8
S
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=30V, ID=4.5A
VGS=10V
V_DD= 30V
ID = 1.0A, VGS= 10 V
RGEN= 6 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 2.0A, VGS= 0 V (Note 2)
890
173
pF
22
19 24
2.8
nC
3.6
11 25
8
18
nS
34 65
9
22
2.0 A
1.2 V