CHM4301ZPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC ( CHM4301ZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -32 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
-40
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-3A
V_DS = -5V, I_D = -6A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = -20V, V_GS = 0V,
f = 1.0 MHz
-1
-3
V
36 44
mΩ
52 68
5
S
1110
200
pF
115
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-20V, ID=-5A
VGS=-10V
V_DD= -20V
ID = -5.0A, VGS= -10 V
RGEN= 3 Ω
20 26
3.2
nC
4.2
11 22
4
8
nS
39 68
12 24
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.0A, VGS= 0 V (Note 2)
-6
A
-1.3 V