CHM4204PAPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM4204PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF Gate-Body Leakage
IGSSR Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 32 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
40
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
VGS=10V, ID=6A
VGS=4.5V, ID=5A
V_DS =5V , I_D = 6A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 20V, V_GS = 0V,
f = 1.0 MHz
1
4
V
24 30 _mΩ
34 45
10
S
1050
155
pF
95
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=20V, ID=6A
VGS=10V
V_DD= 20V
ID =6A , VGS= 10 V
RGEN= 3 Ω
20.5 27
3.5
nC
4.0
14 30
10
20
nS
17 35
18 35
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 1A, VGS= 0 V
24
A
1.2 V