CHM3413SPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM3413SPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -20 V, V_GS = 0 V
V_GS = 12V,V_DS = 0 V
V_GS = -12V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-4.5V, ID=-3.4A
VGS=-2.5V, ID=-2.4A
V_DS = -5V, I_D = -2.8A
-0.36
-0.8 V
76 95
mΩ
97 120
6
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-6V, ID=-2.8A
VGS=-4.5V
V_DD= -6V
ID = -1.0A, VGEN= -4.5 V
RG= 6 Ω
4.8 8
1
nC
1
10 16
13 23
nS
18 25
15 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = -1.5A, VGS= 0 V
-1.5 A
-1.2 V