CHM3258JPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – Dual N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM3258JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 30 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
30
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance}
VGS=10V, ID=7A
VGS=4.5V, ID=3.5A
1
3
V
22 28
mΩ
30 40
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 15V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=15V, ID=6A
VGS=10V
V_DD= 15V
ID = 5.5,A VGS= 10 V
RGEN= 3 Ω
610
145
pF
95
12.3 16
1.5
nC
2.5
9
20
3
8
nS
24 50
4 10
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 2.3A, VGS= 0 V (Note 2)
2.3
A
1.2
V