CHM310PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM310PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF Gate-Body Leakage
IGSSR Gate-Body Leakage
V_GS = 0 V, I_D = 10 µA
V_DS = 100 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
100
V
100 nA
+50 nA
-50 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 1 mA
VGS=4.5V, ID=170mA
VGS=10V, ID=170mA
V_DS =10V, I_D = 4.0A
0.8
2.8 V
5
9
Ω
4.5 6
80
mS
SWITCHING CHARACTERISTICS
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=10V, ID=0.22A
VGS=10V
V_DD= 30V
ID = 0.28A, VGS= 10 V
RGEN= 50 Ω
1.4 2
0.15
nC
0.2
8
8
nS
13
16
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 115mA, VGS= 0 V
115 mA
1.4 V