CHM3060JPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM3060JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 30 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
30
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance}
VGS=10V, ID=14A
VGS=4.5V, ID=14A
1
3
V
6.5 7.8
mΩ
8.5 11.5
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 15V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=15V, ID=14A
VGS=5V
V_DD= 15V
ID = 1.0A, VGS= 10 V
RGEN= 6 Ω
2470
325
pF
185
16 20
5
nC
3
17 35
5
10
nS
50 100
10 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 2A, VGS= 0 V (Note 2)
14
A
1.3
V