CHM3055ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTIC ( CHM3055ZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 48 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
60
V
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_DS(ON)
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=10V, ID=4.0A
V_DS =15V, I_D = 4.0A
2
4
V
75 100 mΩ
3
4
S
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 25V, V_GS = 0V,
f = 1.0 MHz
335
150
pF
40
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=48V, ID=4.0A
VGS=10V
V_DD= 25V
ID = 1.2A, VGS= 10 V
RGEN= 50 Ω
10 13
2.4
nC
4.0
17 25
24
50
nS
41 65
33 60
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 4.0A, VGS= 0 V (Note 2)
2.5 A
1.2 V