CHM2331PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM2331PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -20 V, V_GS = 0 V
V_GS = 8V, V_DS = 0 V
V_GS = -8V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
V_DS = V_GS, I_D =-250 µA
VGS=-4.5V, ID=-3.3A
VGS=-2.5V, ID=-2.8A
VGS=-1.8V, ID=-2.0A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = -10V, V_GS = 0V,
f = 1.0 MHz
-0.4
-0.9 V
38 48
50 65 mΩ
70 95
1170
220
pF
135
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-10V, ID=-4A
VGS=-4.5V
V_DD= -10V
ID = -4A , VGS= -4.5 V
RGEN= 3Ω
10 13
1.3
nC
2.8
14 30
9
20
nS
74 150
35 70
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.6A, VGS= 0 V (Note 2)
-4.2 A
-1.2 V