CHM2321PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM2321PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -16 V, V_GS = 0 V
V_GS = 12V,V_DS = 0 V
V_GS = -12V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D =-250 µA
VGS=-4.5V, ID=-2.4A
VGS=-2.5V, ID=-2.0A
V_DS =-5V, I_D = -1.25A
-0.4
45
65
12
-1.5 V
55
mΩ
80
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-10V, ID=-2.4A
VGS=-4.5V
V_DD= -10V
ID = -1.0A, VGS= -1.5 V
RGEN= 6 Ω
14.8 19
2.8
nC
4.4
13 20
8
12
nS
65 100
29 45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.25A, VGS= 0 V (Note 2)
-0.42 A
-1.2 V