CHM2108JPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM2108JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 20 V, V_GS = 0 V
V_GS = 12V,V_DS = 0 V
V_GS = -12V, V_DS = 0 V
20
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
V_DS =10V, I_D = 10A
0.6
1.3 V
11 14
mΩ
14 20
16
S
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 10V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=15V, ID=10A
VGS=5V
V_DD= 10V
ID = 1.0A, VGS= 10 V
RGEN= 6 Ω
2800
520
pF
380
31 40
4.6
nC
10
17 35
16
33
nS
68 140
31 60
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 2.3A, VGS= 0 V (Note 2)
2.3
A
1.2
V