CHM1710PAPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM1710PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF Gate-Body Leakage
IGSSR Gate-Body Leakage
V_GS = 0 V, I_D = 250 µA
V_DS = 100 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
100
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_{DS(ON) Static Drain-Source On-Resistance VGS=10V, ID=15A}
g _FS
Forward Transconductance
V_DS =2.5V, I_D = 15A
2
4
V
65
85 mΩ
11
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=80V, ID=19A
VGS=10V
V_DD= 50V
ID =19A, VGS= 10 V
RGEN= 25 Ω
26 34
3.3
nC
16.2
17 34
51
100
nS
16 32
71 140
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage IS = 15A, VGS= 0 V
15
A
1.5 V