CHIMD9PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Digital Silicon Transistor

CHDTC114Y LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
PTOT
Total power dissipation
Tamb ≤ 25 ^OC, Note 1
MIN.
−
-6
−
−
MAX.
50
UNIT
V
+40
V
70
mA
100
−
150
mW
TSTG
Storage temperature
Note
Transistor mounted on an FR4 printed-circuit board.
CHDTA114Y CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
R1
Input resistor
CONDITIONS
IO=-100mA; VCC=-5.0V
IO=-1.0mA; VO=-0.3V
IO=-5mA; II=-0.25mA
VI=-5.0V
VI=0V; VCC=-50V
IO=-5.0mA; VO=-5.0V
R2/R1
Resistor ratio
Note
Pulse test: tp≤300uS; δ≤0.02.
CHDTC114Y CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
R1
Input resistor
R 2/R1
Resistor ratio
CONDITIONS
IO=100mA; VCC=5.0V
IO=1mA; VO=0.3V
IO=5mA; II=0.25mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
Note
Pulse test: tp≤300uS; δ≤0.02.
−55
+150
O_C
MIN.
-0.3
−
−
−
−
68
7.0
TYP.
−
−
-0.1
−
−
−
MAX.
−
-1.4
-0.3
-0.88
-0.5
−
10.0 13.0
UNIT
V
V
V
mA
mA
KΩ
3.7
4.7
5.7
MIN.
0.3
−
−
−
−
68
7.0
TYP.
−
−
0.1
−
−
−
10
MAX.
−
1.4
0.3
0.88
0.5
−
13
UNIT
V
V
V
mA
mA
KΩ
3.7
4.7
5.7