CHIMD1PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Digital Silicon Transistor

CHDTC124T LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VALUE
VCBO
Coll ector -Base voltage
50
VCEO
Collector-Emitter voltage
50
VEBO
Emitter-Base voltage
5
IC(Max.)
Coll ector current
100
PD
Power dissipation
Tamb ≤ 25 ^OC, Note 1
150
TSTG
Storage temperature
−55 ∼ +150
TJ
Junction temperature
−55 ∼ +150
RθJ-S
Thermal resistance , Note 1
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
UNIT
V
V
V
mA
mW
O_C
O_C
O_C/W
CHDTA124T CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= -50uA
Collector-Emitter breakdown voltage IC= -1mA
Emitter-Base breakdown voltage IE= -50uA
Collector-Emitter Saturation voltage IC= -5mA; IB= -0.5mA
Collector-Base current
VCB= -50V
Emitter-Base current
VEB= -4V
DC current gain
IC= -1mA; VCE= -5.0V
Input resistor
Transition frequency
IE=5mA, VCE= -10.0V
f==100MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
MIN.
-50.0
-50.0
-5.0
−
−
−
100
15.4
−
TY P . MAX.
−
−
−
−
−
−
−
-0.3
−
-0.5
−
-0.5
250
600
22
26.6
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz
CHDTC124T CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Collector-base breakdown voltage IC=50uA
Collector-emitter breakdown voltage IC=1.0mA
Emitter-base breakdown voltage
IE=50uA
Collector cutoff current
VCB=50V
Emitter cutoff current
VEB=4V
Collector-emitter saturation voltage IC/IB=5mA/0.5mA
DC current gain
IC=1mA; VCE=5.0V
Input resistor
Transition frequency
IC=5mA, VCE=10.0V
f=100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
MIN.
50
50
5.0
−
−
−
100
15.4
−
TYP.
−
−
−
−
−
−
250
22
250
MAX.
−
−
−
0.5
0.5
0.3
600
28.6
−
UNIT
V
V
V
uA
uA
V
KΩ
MHz