CHEMZ8PT Datasheet, PDF (2/5 Pages) Chenmko Enterprise Co. Ltd. – Dual Silicon Transistor

2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
ICP
Pc
TSTG
DC Output current
power dissipation
Storage temperature
NOTE.1
TJ
Junction temperature
Note
1. Single Pulse Pw=1ms
MIN.
−
-
-
-
-
-
-55
-
MAX.
-15
-12
-6
-500
-1000
150
+150
150
UNIT
V
V
V
mA
mW
O_C
O_C
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )
PARAMETERS
CONDITION
SYMBOL
Collector-base breakdown voltage
IC=50uA
BVCBO
Collector-emitter breakdown voltage
IC=1mA
BVCEO
Emitter-base breakdown voltage
IE=50uA
BVEBO
Collector Cut-off Current
IE=0; VCB=60V
ICBO
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
DC Current Gain
VCE=6V
IC=1mA
hFE
Collector-Emitter Saturation Voltage
Output Collector Capacitance
Transition Frequency
IC=50mA; IB=5mA
IE=ie=0; VCB=12V;
f=1MHz
IC=2mA; VCE=12V;
f=100MHz
VCEsat
Cob
fT
MIN.
60
50
7
-
-
120
-
-
-
TYPE
-
-
-
-
-
-
-
2
180
MAX.
-
-
-
0.1
0.1
560
0.4
3.5
-
UNITS
Volts
Volts
Volts
uA
Volts
pF
MHz
2SA2018 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
fT
Transition frequency
CONDITIONS
IC=-1mA
IC=-10uA
IE=-10uA
VCB=-15V
VEB=-6V
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
VCB=-10V,IE=0mA,f=1MHZ
VCE=-2V,IE=10mA,f=100MHZ
MIN.
-15
-6
-
-
270
-
-
-
TYP.
-
-
-
-
-
-
-100
6.5
260
MAX.
-12
-
-100
-100
680
-250
-
UNIT
V
V
V
nA
nA
−
mV
pF
-
MHz