CHEMZ7PT Datasheet, PDF (2/6 Pages) Chenmko Enterprise Co. Ltd. – Dual Silicon Transistor

2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
ICP
Pc
TSTG
DC Output current
power dissipation
Storage temperature
NOTE.1
TJ
Junction temperature
Note
1. Single Pulse Pw=1ms
MIN.
−
−
−
−
−
−
−55
−
MAX.
-15
-12
-6
-500
-1000
UNIT
V
V
V
mA
150
+150
150
mW
O_C
O_C
2SC5585 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCEO _{Collector-emitter breakdown voltage}
BVCBO Collector-base breakdown voltage
IC=1mA
IC=10uA
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
IE=10uA
VCB=15V
VEB=6V
VCE=2V,IC=10mA
IC=200mA,IB=10mA
VCB=10V,IE=0mA,f=1MHZ
MIN.
12
15
6
−
−
270
−
−
fT
Transition frequency
VCE=2V,IE=-10mA,f=100MHZ ^−
TYP.
−
−
−
−
−
−
90
7.5
320
MAX.
−
−
−
100
100
680
250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz
2SA2018 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCEO _{Collector-emitter breakdown voltage}
BVCBO Collector-base breakdown voltage
IC=-1mA
IC=-10uA
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
IE=-10uA
VCB=-15V
VEB=-6V
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
VCB=-10V,IE=0mA,f=1MHZ
MIN.
-12
-15
-6
−
−
270
−
−
fT
Transition frequency
VCE=-2V,IE=10mA,f=100MHZ ^−
TYP.
−
−
−
−
−
−
-100
6.5
260
MAX.
−
−
−
-100
-100
680
-250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz