CHEMX18PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Silicon Transistor

RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCEO _{Collector-emitter breakdown voltage}
IC=1mA
BVCBO Collector-base breakdown voltage
IC=10uA
BVEBO Emitter-base breakdown voltage
IE=10uA
ICBO
IEBO
hFE
VCE(sat)
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
VCB=15V
VEB=6V
VCE=2V,IC=10mA
IC=200mA,IB=10mA
Cob Collector output capacitance
VCB=10V,IE=0mA,f=1MHZ
MIN.
12
15
6
−
−
270
−
−
fT
Transition frequency
VCE=2V,IE=-10mA,f=100MHZ ^−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
90
7.5
320
MAX.
−
−
−
100
100
680
250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz