CHEMT18PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Silicon Transistor

RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
BVCEO _{Collector-emitter breakdown voltage}
IC=-1mA
-12
BVCBO Collector-base breakdown voltage
IC=-10uA
-15
BVEBO Emitter-base breakdown voltage
IE=-10uA
-6
ICBO Collector cut-off current
VCB=-15V
−
IEBO Emitter cut-off current
VEB=-6V
−
hFE DC current gain
VCE=-2V,IC=-10mA
270
VCE(sat) _{Collector-emitter saturation voltage IC=-200mA,IB=-10mA}
−
Cob Collector output capacitance
VCB=-10V,IE=0mA,f=1MHZ −
fT
Transition frequency
VCE=-2V,IE=10mA,f=100MHZ ^−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
-100
6.5
260
MAX.
−
−
−
-100
-100
680
-250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz