CHEMD5PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Digital Silicon Transistor

CHDTC144E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
MIN.
−
VIN
IO
IC(Max.)
PTOT
TSTG
TJ
RθJ-S
Input voltage
DC Output current
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
-10
−
−
Tamb ≤ 25 ^OC, Note 1
−
−55
−
junction - soldering point −
Note
1. Transistor mounted on an FR4 printed-circuit board.
MAX.
50
+12
30
100
200
+150
150
150
UNIT
V
V
mA
mW
O_C
O_C
O_C/W
CHDTA143X CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=-100uA; VCC=-5.0V
IO=-20mA; VO=-0.3V
IO=-10mA; II=-0.5mA
VI=-5V
VI=0V; VCC=-50V
IO=-10mA; VO=-5.0V
IC=-5mA, VCE=-10.0V
f==100MHz
MIN.
-0.3
−
−
−
−
30
3.29
1.7
−
TYP.
−
−
-0.1
−
−
−
4.7
2.1
250
MAX.
−
-2.5
-0.3
-0.18
-0.5
−
6.11
2.6
−
UNIT
V
V
V
mA
uA
KΩ
MHz
CHDTC144E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=2mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
IC=5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
68
32.9
0.8
−
TYP.
−
−
−
−
−
−
47
1.0
250
MAX.
−
3.0
0.3
0.18
0.5
−
61.1
1.2
−
UNIT
V
V
V
mA
uA
KΩ
MHz