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CHDTD114GKPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor | |||
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RATING CHARACTERISTIC ( CHDTD114GKPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÃed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC=50uA
Collector-Emitter breakdown voltage IC=1mA
Emitter-Base breakdown voltage IE=720uA
Collector-Emitter Saturation voltage IC=50mA; IB=2.5mA
Collector-Base current
VCB=50V
Emitter-Base current
VEB=4V
DC current gain
IC=100mA; VCE=5.0V
Input resistor
Transition frequency
IE=-50mA, VCE=10.0V
f==100MHz
MIN.
50.0
50.0
5.0
â
â
300
56
7
â
TY P . MAX.
â
â
â
â
â
â
â
0.3
â
0.5
â
580
â
â
10
13
250
â
UNIT
V
V
V
V
uA
uA
Kâ¦
MHz
Not e
1.Pulse test: tpâ¤300uS; δ â¤0.02.
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