CHDTC643TKPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC643TKPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS MIN.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Collector-base breakdown voltage IC=50uA
20
Collector-emitter breakdown voltage IC=1.0mA
20
Emitter-base breakdown voltage
IE=50uA
12
Collector cutoff current
VCB=20V
−
Emitter cutoff current
VEB=12V
−
Collector-emitter saturation voltage IC/IB=50mA/2.5mA
−
hFE
DC current gain
R1
Input resistor
fT
Transition frequency
IC=50mA; VCE=5.0V
IE=-50mA, VCE=10.0V
f=100MHz
820
3.29
−
RON
Output "ON" resistance
VI=5V,RL=1KΩ ,f=1KHZ −
TYP.
−
−
−
−
−
40
−
4.7
150
MAX.
−
−
−
0.5
0.5
150
2700
6.11
−
0.55
−
UNIT
V
V
V
uA
uA
mV
KΩ
MHz
Ω
Note
1.Pulse test: tp≤300uS; δ≤0.02.