CHDTC623TUPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC623TUPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
RON
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Input resistor
Transition frequency
Output "ON" resistance
CONDITIONS MIN.
IC=50uA
20
IC=1.0mA
20
IE=50uA
12
VCB=20V
−
VEB=12V
−
IC/IB=50mA/2.5mA
−
IC=50mA; VCE=5.0V
IE=-50mA, VCE=10.0V
f=100MHz
820
1.54
−
VI=5V,RL=1KΩ ,f=1KHZ −
TYP.
−
−
−
−
−
40
−
2.2
150
MAX.
−
−
−
0.5
0.5
150
2700
2.86
−
0.4
−
UNIT
V
V
V
uA
uA
mV
KΩ
MHz
Ω
Note
1.Pulse test: tp≤300uS; δ≤0.02.