CHDTC323TKPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC323TKPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS MIN.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Input resistor
Transition frequency
IC=50uA
IC=1.0mA
IE=50uA
VCB=20V
VEB=4V
IC/IB=50mA/2.5mA
IC=50mA; VCE=5.0V
IE=-50mA, VCE=10.0V
f=100MHz
30
15
5.0
−
−
−
100
1.64
−
TYP.
−
−
−
−
−
0.04
250
2.2
200
MAX.
−
−
−
0.5
0.5
0.08
600
2.86
−
UNIT
V
V
V
uA
uA
V
KΩ
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.