CHDTC314TUPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC314TUPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS MIN.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Collector-base breakdown voltage IC=50uA
30
Collector-emitter breakdown voltage IC=1.0mA
15
Emitter-base breakdown voltage
IE=50uA
5.0
Collector cutoff current
VCB=20V
−
Emitter cutoff current
VEB=4V
−
Collector-emitter saturation voltage IC/IB=50mA/2.5mA
−
DC current gain
IC=50mA; VCE=5.0V 100
Input resistor
7
Transition frequency
IE=-50mA, VCE=10.0V −
f=100MHz
TYP.
−
−
−
−
−
0.04
250
10
200
MAX.
−
−
−
0.5
0.5
0.08
600
13
−
UNIT
V
V
V
uA
uA
V
KΩ
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.