CHDTC124GKPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC124GKPT )
CHARA CTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC=50uA
Collector-Emitter breakdown voltage IC=1mA
Emitter-Base breakdown voltage IE=330uA
Collector-Emitter Saturation voltage IC=10mA; IB=0.5mA
Collector-Base current
VCB=50V
Emitter-Base current
VEB=4V
DC current gain
IC=5mA; VCE=5.0V
Input resistor
Transition frequency
IE=-5mA, VCE=10.0V
f==100MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
MIN.
50.0
50.0
5.0
−
−
140
56
15.4
−
TY P . MAX.
−
−
−
−
−
−
−
0.3
−
0.5
−
260
−
−
22
28.6
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz