CHDTC115TUPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC115TUPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Collector-base breakdown voltage IC=50uA
Collector-emitter breakdown voltage IC=1.0mA
Emitter-base breakdown voltage
IE=50uA
Collector cutoff current
VCB=50V
Emitter cutoff current
VEB=4V
Collector-emitter saturation voltage IC/IB=1mA/0.1mA
DC current gain
IC=1mA; VCE=5.0V
Input resistor
Transition frequency
IC=5mA, VCE=10.0V
f=100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
MIN.
50
50
5.0
−
−
−
100
70
−
TYP.
−
−
−
−
−
−
250
100
250
MAX. UNIT
−
V
−
V
−
V
0.5
uA
0.5
uA
0.3
V
600
130
KΩ
−
MHz