CHDTC115GKPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTC115GKPT )
CHARA CTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= 50uA
Collector-Emitter breakdown voltage IC= 1mA
Emitter-Base breakdown voltage IE= 72uA
Collector-Emitter Saturation voltage IC= 5mA; IB= 0.25mA
Collector-Base current
VCB= 50V
Emitter-Base current
VEB= 4V
DC current gain
IC= 5mA; VCE= 5.0V
Input resistor
Transition frequency
IE=-5mA, VCE= 10.0V
f==100MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
MIN.
50.0
50.0
5.0
−
−
−
82
70
−
TY P . MAX.
−
−
−
−
−
−
−
0.3
−
0.5
−
58
−
−
100
130
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz