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CHDTC114TEPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Digital Silicon Transistor
RATING CHARACTERISTIC ( CHDTC114TEPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Collector-base breakdown voltage IC=50uA
Collector-emitter breakdown voltage IC=1.0mA
Emitter-base breakdown voltage
IE=50uA
Collector cutoff current
VCB=50V
Emitter cutoff current
VEB=4V
Collector-emitter saturation voltage IC/IB=10mA/1mA
DC current gain
IC=1mA; VCE=5.0V
Input resistor
Transition frequency
IC=5mA, VCE=10.0V
f=100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
MIN.
50
50
5.0
−
−
−
100
7.0
−
TYP.
−
−
−
−
−
−
300
10.0
250
MAX.
−
−
−
0.5
0.5
0.3
600
13.0
−
UNIT
V
V
V
uA
uA
V
KΩ
MHz