CHDTB143TKPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – PNP Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTB143TKPT )
CHARA CTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= -50uA
-50.0
Collector-Emitter breakdown voltage IC= -1mA
-40.0
Emitter-Base breakdown voltage IE= -50uA
-5.0
Collector-Emitter Saturation voltage IC= -50mA; IB= -2.5mA −
Collector-Base current
VCB= -50V
−
Emitter-Base current
VEB= -4V
−
DC current gain
IC= -50mA; VCE= -5.0V 100
Input resistor
3.29
Transition frequency
IE=50mA, VCE= -10.0V −
f==100MHz
TY P . MAX.
−
−
−
−
−
−
−
-0.3
−
-0.5
−
-0.5
250
600
4.7
6.11
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.