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CHDTB123TKPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – PNP Digital Silicon Transistor | |||
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RATING CHARACTERISTIC ( CHDTB123TKPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÃed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= -50uA
-50.0
Collector-Emitter breakdown voltage IC= -1mA
-40.0
Emitter-Base breakdown voltage IE= -50uA
-5.0
Collector-Emitter Saturation voltage IC= -50mA; IB= -2.5mA â
Collector-Base current
VCB= -50V
â
Emitter-Base current
VEB= -4V
â
DC current gain
IC= -50mA; VCE= -5.0V 100
Input resistor
1.54
Transition frequency
IE=50mA, VCE= -10.0V â
f==100MHz
TY P . MAX.
â
â
â
â
â
â
â
-0.3
â
-0.5
â
-0.5
250
600
2.2
2.86
250
â
UNIT
V
V
V
V
uA
uA
Kâ¦
MHz
Not e
1.Pulse test: tpâ¤300uS; δ â¤0.02.
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