CHDTA114GKPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP Digital Silicon Transistor

RATING CHARACTERISTIC ( CHDTA114GKPT )
CHARA CTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= -50uA
Collector-Emitter breakdown voltage IC= -1mA
Emitter-Base breakdown voltage IE= -720uA
Collector-Emitter Saturation voltage IC= -10mA; IB= -0.5mA
Collector-Base current
VCB= -50V
Emitter-Base current
VEB= -4V
DC current gain
IC= -5mA; VCE= -5.0V
Input resistor
Transition frequency
IE=5mA, VCE= -10.0V
f==100MHz
-50.0
-50.0
-5.0
−
−
−
30
7
−
TY P . MAX.
−
−
−
−
−
−
−
-0.3
−
-0.5
−
-580
−
−
10
13
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.