CH817UPNPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – NPN/PNP Silicon AF Transistor Array

RATING CHARACTERISTIC CURVES ( CH817UPNPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
105
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
I_E = 0; V_CB = 25 V
−
I_C = 0; V_CB = 25 V; TA = 150 ^OC
−
I_C = 0; V_EB = 4 V
−
IC = 100 mA; VCE = 1.0V; note 1
160
IC = 300 mA; VCE = 1.0V
100
I_C = 500 mA; I_B = 50 mA
−
V_BEsat
C_c
C_e
f_T
F
base-emitter saturation voltage I_C = 500 mA; I_B = 50 mA
−
collector capacitance
I_E = i_e = 0; V_CB = 10V ; f = 1 MHz −
emitter capacitance
I_C = i_c = 0; V_BE = 500 mV;
−
f = 1 MHz
transition frequency
I_C = 50 mA; V_CE = 5 V ;
170
f = 100 MHz
noise figure
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ; −
f = 1.0 kHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
100
50
100
400
−
700
UNIT
nA
uA
nA
mV
1.2
V
6
pF
60
pF
−
MHz
4
dB