CH3904TPT Datasheet, PDF (2/6 Pages) Chenmko Enterprise Co. Ltd. – NPN Switching Transistor

RATING CHARACTERISTIC CURVES ( CH3904TPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
I_E = 0; V_CB = 30 V
I_C = 0; V_EB = 6 V
V_CE = 1 V; note 1
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
I_C = 50 mA
I_C = 100 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_C = i_c = 0; V_BE = 500 mV;
f = 1 MHz
f_T
transition frequency
I_C = 10 mA; V_CE = 20 V;
f = 100 MHz
F
noise Þgure
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 10 mA; I_Bon = 1 mA;
I_Boff = −1 mA
MIN.
−
−
60
80
100
60
30
−
−
650
−
−
−
300
−
−
−
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
UNIT
nA
nA
−
−
300
−
−
200
mV
300
mV
850
mV
950
mV
4
pF
8
pF
−
MHz
5
dB
65
ns
35
ns
35
ns
240
ns
200
ns
50
ns