2SC4097PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – Medium Power NPN Transistor

RATING CHARACTERISTICS ( 2SC4097PT )
ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )
PARAMETERS
CONDITION
SYMBOL
Collector Cut-off Current
IE=0; VCB=20V
ICBO
Emitter Cut-off Current
IC=0; VEB=4V
ICEO
DC Current Gain
VCE=3V; Note 1
IC=100mA; Note 2
hFE
Collector-Emitter Saturation Voltage
IC=500mA; IB=50mA
Base-Emitter Saturatio Voltage
Output Collector Capacitance
Transition Frequency
IC=500mA; IB=50mA
IE=ie=0; VCB=12V;
f=1MHz
IC=20mA; VCE=5V;
f=100MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390,
VCEsat
VBEsat
Cob
fT
MIN.
-
-
82
-
-
-
-
TYPE
-
-
-
-
-
6.0
250
MAX.
1.0
1.0
390
0.4
1.1
-
-
UNITS
uA
uA
Volts
mVolts
pF
MHz
RATING CHARACTERISTIC CURVES ( 2SC4097PT )
Fig.1 Grounded emitter propagation
characteristics
1000
500 ^VCE=6V
200
100
Ta=100^OC
50
80^OC
20
25^OC
10
5
25^OC
- 55^OC
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.2 Grounded emitter output
characteristics (1)
100
Ta=25^OC
0.50mA
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3 Grounded emitter output
characteristics (2)
500
Ta=25^OC
400
2mA
1.8mA
1.6mA
1.4mA
300
1.2mA
1.0mA
0.8mA
200
0.6mA
0.4mA
100
0.2mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)