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2N7002ESPT Datasheet, PDF (1/5 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
2N7002ESPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 0.300 Ampere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
FEATURE
* Small surface mounting type. (SOT-23)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* ESD protect in input gate 1.5KV
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
MARKING
* PK1
CIRCUIT
D3
1G
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
ID
PD
TJ,TSTG
TL
Maximum Drain Current - Continuous TA= 25°C
- Pulsed
Maximum Power Dissipation
TA= 100°C
TA= 25°C
TA=100°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.045 (1.15)
.033 (0.85)
Dimensions in inches and (millimeters)
2N7002ESPT
60
60
±20
±40
300
190
830
500
-65 to 150
300
SOT-23
SOT-23
Units
V
V
V
mA
mW
mW
°C
°C
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
350
°C/W
2003-10