2N7002ESEPT Datasheet, PDF (1/2 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
2N7002ESEPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 500 mAmpere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
FEATURE
* Small surface mounting type. (SOT-23)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* ESD protect in input gate 1.5KV
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
SC-70/SOT-323
1.3±0.1
0.65 _2.0±0.2
0.65
0.3±0.1
1.25±0.1
CIRCUIT
D₃
1G
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
V_GSS
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
I_D
Maximum Drain Current - Continuous TA= 25°C
- Pulsed TA= 100°C
P_D
Maximum Power Dissipation
T_J,T_STG Operating and Storage Temperature Range
0.05~0.2
0.1Min.
2.0~2.45
Dimensions in millimeters
2N7002ESEPT
60
60
±20
±40
500
800
400
-65 to 150
0.8~1.1
0~0.1
SC-70/SOT-323
Units
V
V
V
mA
mW
°C
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
350
°C/W
2006-03