1N4148PT Datasheet, PDF (1/2 Pages) Chenmko Enterprise Co. Ltd. – SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 75 Volts CURRENT 0.15 Ampere
APPLICATION
* Ultra high speed switching
1N4148PT
FEATURE
* Small surface mounting type. (DO-35)
* High speed. (TRR=4.0nSec Typ.)
* Suitable for high packing density.
* Maximum total power disspation is 500mW.
* Peak forward current is 500mA.
CONSTRUCTION
* Silicon epitaxial planar
CIRCUIT
DO-35
1.02 (26.0)
MIN.
.022 (0.56)
DIA.
.018 (0.46)
.165 (4.2)
MAX.
1.02 (26.0)
MIN.
.079 (2.0)
DIA.
MAX.
MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )
RATINGS
Maximum Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum DC Blocking VoltageMaximum RMS Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
@1Sec
@1.0uSec
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Thermal Resistance (Note 4)
Maximum Operating and Storage Temperaturd Range
SYMBOL
VRM
VRRM
VRWM
VR
VDC
IO
IFSM
CJ
trr
R JA
TJ,TSTG
Dimensions in inches and (millimeters)
1N4148PT
100
75
53
0.15
1.0
2.0
4.0
4.0
350
-65 to +175
ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
1N4148PT
Maximum Instantaneous Forward Voltage at IF= 10 mA
VF
1.0
VR= 20V @TJ=25^oC
5.0
Maximum Average Reverse Current
VR= 75V @TJ=25^oC
VR= 20V @TJ=150^oC
IR
25
30
VR= 70V @TJ=150^oC
50
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and RL= 100 ohms.
3. ESD sensitive product handling required.
4. Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
DO-35
UNITS
Volts
Volts
Volts
Amps
Amps
pF
nSec
o_C/W
o_C
UNITS
Volts
uAmps
2001-6