SCS521S Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Schottky Barrier Diode

PB FREE PRODUCT
.FEATURES
Low current rectification and high speed switching
....MECHANICAL DATA
Extremely small surface mounting type. (EMD2)
Io=200mA guaranteed despite the size.
Low V_F .(V_F =0.40V Typ. At 200mA)
Silicon epitaxial planer
SCS521S
Schottky Barrier Diode
SOD-523
CATHODE MARK
C
0.3±0.05
0.12±0.05
0.8±0.05
0.6±0.1
Marking Code: C/ 5M
Dimensions in millimeters
MAXIMUM RATINGS (TJ = 25^°C unless otherwise noted)
Rating
Symbol
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction Temperature
Operating and Storage Temperature Rang
VR
Io
IFSM
TJ
Tj , Tstg
Value
30
200
1
125
– 40 to +125
Unit
Volts
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25^°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Forward voltage ( IF = 200mA)
Reverse current ( V_R= 10V)
VF
–
IR
–
–
0.50
Volts
–
30
mA