BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV70
PB FREE PRODUCT
SURFACE MOUNT FAST SWITCHING DIODE
VOLTAGE 75 Volts
POWER 250mWatts
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.008 gram
Pb free plating 98.5% Sn above
SOT- 23
.119(3.00)
.110(2.80)
.083(2.10)
.066(1.70)
.006(.15)MAX
.020(.50)
.013(.35)
Unit: inch (mm)
.006(.15)
.002(.05)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
Marking Code
PARAMETER
SYMBOL BAW56 BAV70
A1 JA or A4
BAV99
A7
BAL99
JF
UNITS
Reverse Voltage
VR
75
V
Peak Reverse Voltage
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f >=50 Hz
Peak Forward Surge Current,1.0us
VRM
IO
IFSM
100
150
2.0
V
mA
A
Power Dissipation Derate Above 25^OC
Maximum Forward Voltage
Maximum DC Reverse Current at 25V
75V
Maximum Junction Capacitance( Notes 1)
PTOT
VF
IR
CJ
250
0.715 @ IF=0.001A
0.855 @ IF=0.01A
1.0 @ IF=0.05A
1.25 @ IF=0.15A
0.03
2.5
1.5
mW
V
µA
pF
Maximum Reverse Recovery Time (Notes 2)
TRR
4.0
ns
Maximum Thermal Resistance
RθJA
625
O_{C / W}
Junction Temperature Range
Circuit Figure
TJ
COMMON ANODE
-55 TO +150
Common Common
Anode Cathode
Series
COMMON CATHODE
SERIES
O_C
Single(Alt)
SINGLE (Alt)
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω