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US5ABF Datasheet, PDF (2/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 5 .0A SURFACE MOUNT ULTRAFAST DIODE | |||
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RATINGS AND CHARACTERISTIC CURVES US5ABF THRU US5MBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Noteï¼1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
-1.0
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
6.0
5.0
4.0
Ambient
3.0
100LFM
Lead
2.0
Single phase half wave resistive
1.0 or inductive P.C.B mounted on
0.5Ã0.5"(12.7Ã12.7mm) pad areas.
0.0
25 50 75 100 125 150 175
Ambient /Lead Temperature (°C)
Fig.3 Typical Reverse Characteristics
300
100
10
TJ=125°C
TJ=75°C
1.0
TJ=25°C
0.1
0
20
40
60
80
100
% of PIV.VOLTS
Fig.3 Typical Instaneous Forward
Characteristics
20
10 TJ=25°C
pulse with 300μs
1% duty cycle
1.0
0.1
0.01
0.0
US5ABF~US5DBF
US5GBF
US5JBF~US5MBF
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
150
125
100
75
50
8.3 ms Single Half Sine Wave
25
(JEDEC Method)
00
1
10
Number of Cycles
100
The cruve graph is for reference only, can't be the basis for judgment(æ²çº¿å¾ä»
ä¾åè)!
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