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ES2ABF Datasheet, PDF (2/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER | |||
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RATINGS AND CHARACTERISTIC CURVES ES2ABF THRU ES2JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Noteï¼1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
2.4
2.0
1.6
1.2
0.8
0.4
0.0
Single phase half wave resistive
or inductive P.C.B mounted on
0.5Ã0.5"(12.7Ã12.7mm) pad areas.
25
50
75 100 125
Lead Temperature (°C)
150
175
Fig.4 Typical Forward Characteristics
10
T J = 2 5°C
1.0
0.1
0.01
ES2ABF~ES2DBF
ES2EBF/ ES2GBF
ES2JBF
0.001
0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
T J = 1 2 5°C
10
T J = 7 5°C
1.0
T J = 2 5°C
0.1
0
20
40
60
80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
70
60
50
40
30
T J = 2 5°C
20
f = 1.0MHz
Vsig = 50mVp-p
10
0.1
1
10
Reverse Voltage (V)
100
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
8.3 ms Single Half Sine Wave
10
(JEDEC Method)
00
1
10
Number of Cycles
100
The cruve graph is for reference only, can't be the basis for judgment(æ²çº¿å¾ä»
ä¾åè)!
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