UG4KB05G Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SILICON BRIDGE RECTIFIERS

D3K
UG4KB05G THRU UG4KB100G
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes
FEATURES
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Designed for surface mount application
Plastic material-UL flammability 94V-O
MECHANICAL DATA
Case: D3K molded plastic body
Terminals: Plated leads solderable per
MIL-STD-202, Method 208
Polarity: As marked on case
Mounting Position: Any
Marking : Type number
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
at TA=40 C(Note 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
VRRM
VRMS
VDC
I(AV)
IFSM
UG4K
B05G
50
35
50
UG4K
B10G
100
70
100
UG4K
B20G
200
140
200
UG4K
B40G
400
280
400
UG4K
B60G
600
420
600
UG4K
B80G
UG4K
B100G
UNITS
800 1000 VOLTS
560 700 VOLTS
800 1000 VOLTS
4.0
Amps
120.0
Amps
Forward voltage per element @IF=4.0A
VF
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
Typical juntion capacitance per leg
Typical Thermal Resistance per leg(Note 2)
Operating junction temperature range
CJ
RθJA
RθJL
TJ, TSTG
Note:1. Mounted on glass epoxy PC board with 1.3mm² solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C..
1.1
5.0
0.5
21
55
15
-55 to +150
Volts
µA
mA
pF
C/W
C